Text: A r 746 March 1993 N AMER PHILIPS/DISCRETE V.H.F. transistor tt 2222 TT 2222 npn SOT171 multilayer ceramic capacitor heatsink catalogue BLV934 philips 0201 capacitor transistor 257 isolated npn metalДЄbstract: transistor tt 2222 ic TT 2222 BLW60C TRIMMER CARBON POTENTIOMETER Philips film capacitors polystyrene trimmer 3-30 pf Philips film capacitors 27 pf z670 BD137 SYMBOL PARAMETER CONDITIONS MIN, By Its Respective Manufacturer Philips Semiconductors Product specification UHF power transistorД«LV934 OT171 OT171 col11 OT171. The transistor has, Product specification UHF power transistor BLV934 LIMITING VALUES In accordance with the Absolute, transistor BLV934 CHARACTERISTICS Tj = 25 Г‚вЊ unless otherwise specified. Text: ГЇВ»ВїPhilips Semiconductors Product specification UHF power transistor BLV934 FEATURES Гў, silicon planar epitaxial transistor intended for common emitter class-AB operation.

power transistor OfciE D ГўД«LY89A PL-25W ic TT 2222 transistor tt 2222 BLY89A TT 2222 npn Transistor bly89a TT 22 transistor dfv 36 yl 3710 dfv 3ДЄbstract: TT 2222 npn SOT171 multilayer ceramic capacitor heatsink catalogue BLV934 philips 0201 capacitor transistor 257 isolated npn metal power transistor Jl BLY89A CHARACTERISTICS Tj = 25 Г‚вЊ unless otherwise specified Breakdown, FГўВЂв‰Ѓ1 1002 March 1971 Г‚ВҐ i N AMER PHILIPS/DISCRETE 86D 01914 V.H.F. Every transistor Is tested under severe load mismatch conditions with a supply over-voltage to 16,5 V.

Text: TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch, Operating junction temperature Tj max. POWER TRANSISTOR BLW29 N-P-N silicon planar epitaxial transistor intended for use in class-A, B or C operated mobile, capability, the transistor is especially suited for design of wide-band and semi-wide-band v.h.f.

CONDITIONS PARAMETER, UHF power transistor BLT50 APPLICATION INFORMATION RF performance at Ts V.H.F. Text: UHF pow er transistor FEATURES ГўВЂВў SMD encapsulation ГўВЂВў Gold metallization ensures, transistor encapsulated in a S OT223 surface mounted envelope and designed primarily for use in hand-held, oemiconauctors SHH H A P X Product specification U H F pow er transistor BLT50 LIMITING VALUES In, semiconauctors BLT50 UHF power transistor CHARACTERISTICS Tj = 25 Г‚вЊ. (1) Silan Microelectronics Joint-stock (2) Sipex Corporation (1) Skyworks Solutions Inc.Transistor tt 2222 Datasheets Context Search Catalog DatasheetДЄbstract: smd 809 x transistor transistor SMD S33 (293) Sharp Electrionic Components (4) Shindengen Electric Mfg.Co.Ltd (78) Siemens Semiconductor Group (493) SiGe Semiconductor, Inc. (229) Samsung semiconductor (152) Sanken electric (392) SanRex Corporation (20) Sanyo Semicon Device (442) Seiko Instruments Inc (2) Seme LAB (358) Semicoa Semiconductor (107) SemiWell Semiconductor (23) Semtech Corporation (15) SEMTECH ELECTRONICS LTD. (72) Panasonic Semiconductor (334) PerkinElmer Optoelectronics (1) PMC-Sierra, Inc (2) Polyfet RF Devices (271) Power Innovations Ltd (13) Powerex Power Semiconductors (58) QT Optoelectronics (1) Recom International Power (3) Rectron Semiconductor (130) Renesas Technology Corp (456) RF Micro Devices (3) RICOH electronics devices division (1) Rohm (578) SamHop Microelectronics Corp. NXP Semiconductors (1957) Pan Jit International Inc.

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